Plasma‐Induced Nanocrystalline Domain Engineering and Surface Passivation in Mesoporous Chalcogenide Semiconductor Thin Films

Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films C.Voz

In this work we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the Quasi-Steady-State Photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on nand p-type float...

Holographic Recording in Amorphous Chalcogenide Semiconductor Thin Films

architecture and engineering of nanoscale sculptured thin films and determination of their properties

چکیده ندارد.

Fabrication of mesoporous metal chalcogenide nanoflake silica thin films and spongy mesoporous CdS and CdSe.

Mesoporous silica metal oxide (ZnO and CdO) thin films have been used as metal ion precursors to produce the first examples of mesoporous silica metal sulfide (meso-SiO(2) @ZnS, meso-SiO(2) @CdS) or silica metal selenide (meso-SiO(2) @ZnSe, meso-SiO(2) @CdSe) thin films, in which the pore walls are made up of silica and metal sulfide or metal selenide nanoflakes, respectively. A gentle chemical...

Stress-Driven Surface Topography Evolution in Nanocrystalline Al Thin Films

In their as-fabricated state, nanocrystalline (nc) materials, consisting of individual grains or crystallites with diameters less than 100 nm, are systems that exist far from equilibrium. The large volume fraction of grain boundaries (GB) present in these materials contains considerable excess free energy, which provides a large driving force for grain growth. Grain growth in nc materials has b...